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Si7342DP
Vishay Siliconix
MOSFETS SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.8
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 70 °C
V DS ?? 5 V, V GS = 10 V
40
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 15 A
V GS = 4.5 V, I D = 13 A
V DS = 15 V, I D = 15 A
0.0066
0.0077
65
0.00825
0.00975
?
S
Diode Forward Voltage
a
V SD
I S = 2.9 A, V GS = 0 V
0.73
1.1
V
Dynamic
b
Input Capacitance
C iss
1900
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C oss
C rss
Q g
Q gs
Q gd
V DS = 15 V, V GS = 0 V, f = 1 MHz
V DS = 15 V, V GS = 4.5 V, I D = 15 A
530
120
12.5
3.9
2.1
19
pF
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 15 V, R L = 15 ?
I D ? 1 A, V GEN = 10 V, R G = 6 ?
I F = 2.9 A, dI/dt = 100 A/μs
0.8
1.2
13
8
48
13
36
1.8
20
13
75
20
55
?
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
60
50
40
30
V GS = 10 V thru 3 V
50
40
30
20
10
20
10
T C = 125 °C
25 °C
0
2V
0
- 55 °C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72751
S11-0212-Rev. D, 14-Feb-11
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